Microbeam Mapping of Charge Collection in Hexagonal Power MOSFETs and Its Relation to Single Event Burnout
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چکیده
Single Event Burnout (SEB) in power MOSFETs is of major concern with regard to the suitability of the MOSFET for space missions and other high particle radiation environments. Large efforts have been made to deeply understand this phenomenon, in order to develop power MOSFETs which are less sensitive to SEB [1], [2]. When an ion hits the MOSFET source, amplification of an inherent parasitic bipolar transistor (BJT) may start an avalanche process, and as a result, a breakdown, i.e. a Burnout event, may occur. The SEB cross-section depends on the bias voltage (electric field), the ion stopping power, and its hit location on the MOSFET surface. Experiments with a microbeam can yield valuable information regarding the effect of the hit location on SEB probability, unattained in wide beam tests. This information is highly important to validate the results obtained by the simulations. The current amplification of the parasitic BJT gives rise to higher charge collection (CC). In a previous work carried out at the GSI microbeam facility [3], the mapping of the charge collection of an ST Microelectronics device revealed areas with high charge collection. These spots were related to points where the device might burn out. The charge collection spectrum was measured using a pulse-height analyzer as was done in [1]. In the present work we study an International Rectifier HEXFET technology MOSFET, IRF360. In Fig. 1 the “neck” area is shown below the gate where the MOSFET current is marked, with the N source structure on both sides. The hexagonal structure is perfect for mapping since there is no ambiguity in determining the location of each ion hit within the FET cell. For the microbeam mapping we have used Xe ions with 634 MeV.
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تاریخ انتشار 2007